Materials Reliability in Microelectronics IV
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패키지
북카드
작가정보
저자(글) Borgesen,P.
목차
Preface Acknowledgments Materials Research Society Symposium Proceedings Reliability Implications of Defects in High Temperature Annealed Si/SiO[subscript 2]/Si Structures p. 3 Comparison Between SiO[subscript 2] Films and Nitridated Oxides in N[subscript 2]O Ambient in Terms of Bulk/Interface Trapping Properties p. 13 Impact of Various In Situ Preoxidation Process Perturbations on Gate Oxide Quality p. 25 Comparing the Structure and Behavior of Point Defects in Silicon Oxynitride Gate Dielectrics Formed by NH[subscript 3]-Nitridation and N[subscript 2]O-Growth/Nitridation p. 31 The Roles of Several E' Variants in Thermal Gate Oxide Reliability p. 37 Comparison of Film Quality and Step Coverage for Silicon Dioxide Dielectrics Formed by RTCVD Using Tetraethoxysilane and Silane p. 43 Reliability Study of Plasma Etching Damage in ULSI Process p. 51 Effect of Power on the Properties of SiO[subscript 2] Films Produced by Plasma-Enhanced Chemical Vapour Deposition p. 57 Effect of Phosphorus-Doped Polysilicon Anneal on Thin Oxide Reliability as Probed with X-Ray Damage Characterization p. 63 Excess Conductance of MOS Diodes Suffered Current Stress and Elucidation of Induced Interface States p. 69 Characterization of PECVD [actual symbol not reproducible] Films and Its Correlation to Device Performance and Reliability p. 75 Diffusion-Induced Precipitation in Arsenosilicate Glass (AsSG) p. 83 Adhesion Measurements of Thin Films by Several Methods p. 91 Reliability of Optical Coatings Submitted to a High Power Continuous Wave Laser Beam p. 103 An Analysis by Scanning Acoustic Microscopy of the Mechanical Stability of PSG and Si[subscript 3]N[subscript 4] Passivation Films p. 115 HREM Structure Characterization of Relaxed Interfaces in Covalently Bonded Materials p. 121 Effects of Residual Stress on the Measurement of Hardness and Elastic Modulus Using Nanoindentation p. 127 Determination of the Mechanical Behaviour of Thin Films on Substrate Systems from Micromechanical Experiments p. 135 Calculation of Stresses in Strained Semiconductor Layers p. 149 The Role of Hydrogen in Current-Induced Degradation of GaAs/AlGaAs Heterojunction Bipolar Transistors p. 161 W/Si[subscript 1-x]Ge[subscript x] Schottky Barrier: Effect of Stress and Composition p. 167 The Effect of Substrate Temperature of the Crystallinity and Stress of Ion Beam Sputtered Silicon on Various Substrates p. 179 Chip Surface Damage Induced by Internal Stress of Lead-on-Chip (LOC) Packages p. 185 Profiling the Deep Trap Level in the Semiconductor Heterostructures by Small-Pulse Deep Level Transient Spectroscopy p. 195 X-Ray Strain Measurements in Fine-Line Patterned Al-Cu Films p. 203 X-Ray Spectrometer with a Submicron X-Ray Beam for ULSI Microanalysis p. 209 Plasticity, Microstructure and the Thermal Dependence of Flow Stresses in Aluminum Thin Film Interconnects p. 215 Tensile Deformation-Induced Microstructures in Free-Standing Copper Thin Films p. 227 The Effect of Ultra-Low Temperature Treatments on the Stress in Aluminum Metallization on Silicon Wafers p. 233 X-Ray Diffraction Determination of the Effect of Passivations on Stress in Patterned Lines of Tungsten p. 241 Thermally Induced Stresses in Passivated Thin Films and Patterned Lines of AlSiCu p. 247 Geometric Characterization of Electromigration Voids p. 255 Line-Width Dependence of Stress in Passivated Al Lines During Thermal Cycling p. 261 Electromigration Failure of Narrow Al Alloy Conductors Containing Stress - Voids p. 269 Measurement and Interpretation of Strain Relaxation in Passivated Al-0.5% Cu Lines p. 275 Line Width Dependence of Stress Relaxation and Yield Behavior of Passivated Al(Cu) Lines p. 281 Thermal Stresses in Passivated Copper Interconnects Determined by X-Ray Analysis and Finite Element Modeling p. 289 The Effect of Variability Among Grain Boundary Energies on Grain Growth in Thin Film Strips p. 295 Electromigration Properties and Their Correlation to the Physical Characteristics of Multilevel Metallizations p. 301 Microstructural Characterization of Copper Thin Films on Metallic Underlayers p. 307 Segregation of Copper in Dilute Aluminum - Copper Alloys for Interconnects p. 313 Electromigration Lifetimes of Single Crystal Aluminum Lines with Different Crystallographic Orientations p. 319 The Microstructure and Electromigration Behaviour of Al-0.35%Pd Interconnects p. 325 Microstructural Evolution of Aluminum Interconnects During Post-Pattern Anneals: Correlation to Improved EM Lifetime p. 333 Stress Distribution and Mass Transport Along Grain Boundaries During Steady-State Electromigration p. 341 Modeling Electromigration-Induced Stress Buildup Due to Nonuniform Temperature p. 353 Stress Relaxation and Electromigration Kinetics in Short Metal Lines: Transition to Creep Controlled Regime p. 361 Electromigration Failure in Thin Film Conductors Possessing a Near-Bamboo Structure p. 367 Detailed Study of Electromigration Induced Damage in Al and AlCuSi Interconnects p. 373 Dislocation Climb in the Electron Wind p. 379 Precipitate Drifting and Coarsening Caused by Interface Electromigration p. 391 Electromigration Damage in Conductor Lines: Recent Progress in Microscopic Observation and Mechanistic Modelling p. 397 In Situ Observations of Voiding in Metal Lines Under Passivation p. 409 Transgranular Slits in Aluminum Interconnects Caused by Thermal Stress and Electric Current p. 415 Early Failure Sites and Electromigration p. 421 Passivation Design/Electromigration Performance Correlations in Layered Aluminum Metallizations p. 429 Predicting and Comparing Electromigration Failure for Different Test Structures p. 435 Electromigration Characteristics of Cu and Al Interconnections p. 441 Early Electromigration Failure in Submicron Width, Multilayer Al Alloy Conductors: Sensitivity to Stripe Length p. 453 Interpretation of Resistance Changes During Interconnect Reliability Testing p. 459 Critical Review of I-Particle Models in Electromigration Resistance Change Modeling p. 465 Effect of TiN Arc on Electromigration Performance of Tungsten Plug Via p. 471 Effects of Thin Film Stress in Sub Micron Multilevel Devices p. 477 1/F Noise Measurements in Al-Si, Al-Si-V and Al-Si-V-Pd Alloy Films p. 483 Statistics of Crack Initiation and Propagation p. 491 Fracture Strength of Thin Ceramic Membranes p. 501 Measurement of Adhesion at Film-Substrate Interfaces by Constant Depth Scratch Testing p. 507 Cracking Mechanisms of Fine Lines by Microwedge Scratch Testing p. 513 The Formation Mechanism and Removal Methods of Metal Pillar by Plasma Etch p. 519 Experimental Stress Analysis Methods and Some Thin Film Applications p. 527 The Edge Delamination Test: Measuring the Critical Adhesion Energy of Thin-Film Coatings, Part II: Mode Mixity and Application p. 541 Real-Time Thermo-Mechanical and Adhesive Property Evaluation of Thin Films and Multi-Layers p. 553 Water Adsorption at Polymer/Silicon Wafer Interfaces p. 565 Adhesion Strength of Cu/Polyimide Interfaces by Micro-Wedge Scratching p. 571 Anisotropy in Thermal, Electrical and Mechanical Properties of Spin-Coated Polymer Dielectrics p. 577 Organic Polymer Dielectrics in Microelectronic Technologies: Reliability Requirements, Testing, and Qualification p. 589 Moisture-Assisted Crack Growth in Polymer Adhesive-Glass Sandwich Geometries p. 599 Atomic Force Microscopy Structural Characterization of Polyaniline Thin Film Sensors p. 605 Embedded Circuitry in Polymeric Films by Linear Energy Transfer (LET) of MeV Ions p. 613 Long-Term Study on the Optical Performance of Ion Implanted PMMA Under the Influence of Different Media p. 619 Author Index p. 625 Subject Index p. 629 Table of Contents provided by Blackwell. All Rights Reserved.
기본정보
ISBN | 9781558992382 ( 1558992383 ) |
---|---|
발행(출시)일자 | 1994년 10월 19일 |
쪽수 | 629쪽 |
크기 |
160 * 231
* 38
mm
/ 1043 g
|
총권수 | 1권 |
언어 | 영어 |
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